| 摘要 |
PROBLEM TO BE SOLVED: To obtain a voltage driven bipolar semiconductor device which can control a large current by a small driving power, by a method wherein a semiconductor element which controls a current is constituted of a bipolar semiconductor device, and a semiconductor element which drives the bipolar semiconductor device is constituted of a field-effect transistor. SOLUTION: In a state that the potential of a collector C is higher than that of an emitter E, the potential of a gate G and that of the emitter E are set at 0 V. Then, a depletion layer is spread according to a built-in voltage from the bonding part of an n-channel region 5 which is adjacent to a p-type buried gate region 9, and the channel region 5 is pinched off. The depletion layer is spread to an n-type drift layer 2 on the side of a collector electrode 20 from the bonding part of a p-type base region 3 to the n-type drift layer 2 and from the bonding part of the p-type buried gate region 9 to the n-type drift layer 2, and a current across the emitter E and the collector C is cut off. When a gate voltage which becomes higher than the built-in voltage of a p-n junction with reference to the potential of the emitter E is applied to the gate G, the current flows into the storage layer of the n-type channel region 5, an n-type source region 6, a base electrode 23 and the p-type base region 3 from the collector C.
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