| 摘要 |
PROBLEM TO BE SOLVED: To decrease the area of a magnetic layer on the end face and to obtain high sensitivity and high resolution for the detection of changes in the magnetic flux in a narrow region by forming either a first or a second magnetic layer having a single magnetic domain structure and by allowing the all current flowing in the magnetoresistance effect film to pass through an intermediate layer. SOLUTION: As for magnetic layers, a Fe-1.3 at.% Ru alloy layer 2 and a Fe-1.0 at.% C alloy layer 4 are used, and a SiO2 layer 3 is used as an intermediate layer to form a laminated structure. By forming a part of a magnetoresistance effect film on a nonmagnetic metal conductor and by overlapping the magnetoresistance effect film on a straight line so as to allow all the flowing current to pass through the intermediate layer, the longitudinal direction of all magnetic layers in the magnetoresistance effect film can be arranged almost perpendicular to the magnetic recording medium face. Thereby, the area of the magnetic layer at the position of the end face of the magnetoresistance effect film facing a magnetic recording medium can be decreased. As for the magnetoresistance effect film, any type using a ferromagnetic tunnel effect or an antiferromagnetic intermediate film can be used. |
