发明名称 |
Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same |
摘要 |
The present invention provides methods of manufacturing a field oxide isolation structure over a semiconductor. One of the methods includes the steps of: (1) depositing a first stack-nitride sublayer over the semiconductor at a first deposition rate and (2) subsequently depositing a second stack-nitride sublayer over the first stack-sublayer at a second deposition rate that is either greater or less than the first deposition rate. The first and second deposition rates provide first and second stack-nitride sublayers that cooperate to form a relatively thin, uniform thickness of the field oxide isolation structure over the semiconductor and provide a stress-accommodating system within the semiconductor. The varying rates of deposition and accompanying changes in mixture ratio, produce a stack that is better able to absorb stress, has greater uniformity and is far less subject to the disadvantageous phenomenon of stack-lifting, particularly encountered in semiconductor having a PADOX layer deposited thereon.
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申请公布号 |
US6090686(A) |
申请公布日期 |
2000.07.18 |
申请号 |
US19970878242 |
申请日期 |
1997.06.18 |
申请人 |
LUCENT TECHNOLOGIES, INC. |
发明人 |
BRADY, DAVID C.;KIZILYALLI, ISIK C.;ROY, PRADIP K.;VAIDYA, HEM M. |
分类号 |
H01L21/316;H01L21/318;H01L21/32;H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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