NITRIDE SYSTEM SEMICONDUCTOR DEVICE AND METHOD FOR GROWING SEMICONDUCTOR CRYSTAL

摘要

PURPOSE: A nitride system semiconductor device and method for growing a semiconductor crystal is to prevent incoherence of lattice from being occurred at the boundary of two stacked layers. CONSTITUTION: A nitride system semiconductor device comprises a substrate, a BN system compound buffer layer formed on the substrate and containing boron and nitrogen atoms and a nitride system semiconductor crystal layer formed on the BN system compound buffer layer. A method for growing a semiconductor crystal comprises the steps of: providing a substrate; epitaxial growing a BN system compound on the substrate at a first temperature to form a buffer layer; and forming a nitride system semiconductor crystal layer on the buffer layer at a second temperature higher than the first temperature.