| 摘要 |
PURPOSE: A manufacturing method for a TMA device module is provided to reduce the TCP contact defect by forming the source pad, gate pad and the common electrode pad in a same height and in a double angle structure. CONSTITUTION: A device comprises a TMA module(1), an insulation substrate(10), a field oxide layer(20), a MOS transistor(40), a low temperature oxide layer(50), a source line(60b), a gate line(60a), a metal layer(60), a source pad(62), a gate pad(64), a pad protection layer(66), a protection layer(70), an actuator(100), and a common electrode pad(310). A manufacturing method comprises a step of forming a driving substrate in which the transistor is installed; a step of forming the actuator and the driving mirror on the driving substrate; a step of forming the common electrode line to be electrically connected with the upper electrode of the actuator; a step of etching pad open area until the source pad, gate pad and the common electrode pad are formed; a step of forming the pad protection layer to protect the source pad, gate pad, and the common electrode pad; and a step of joining the TCP with the exposed source pad, gate pad and the common electrode pad.
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