METHOD FOR FORMING BIT LINES OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for forming bit lines of semiconductor memory device is provided to inject impurity ions into the surface of a plug within a contact hole to form an ion injection layer, thereby solving prior problems. CONSTITUTION: A method for forming bit lines of semiconductor memory device comprises: a first step forming an insulation film on a silicon substrate and then patterning the insulation film to form a contact hole; a second step forming a plug within the contact hole; a third step injecting impurity ions into the surface of the plug to form an ion injection layer; a forth step forming a level dielectric film; and forming a metal layer on the level dielectric film.