LIGHT TRANSMITTANCE ON LIGHT HAVING SHORT WAVELENGTH IMPROVED IMAGE SENSOR AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A light transmittance on light having short wavelength improved image sensor and fabrication method thereof is to selectively increase light transmittance with respect to light having a short wavelength or a specific wavelength. CONSTITUTION: A fabrication method of a light transmittance-improved image sensor comprises the steps of: stacking an oxide layer(103) and a nitride layer(104) in the named order as a protecting layer on a semiconductor substrate having a metal line(101) formed thereon; forming a packing layer(109) of oxide on a predetermined portion of the nitride layer; selectively etching a predetermined portion of the nitride layer where the packing layer is not formed and on which a specific color filter layer(106) of a color filter array having red, green and blue is being formed; and forming the color filter array on the resultant substrate including the etched nitride layer.