METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided which can form a fine contact hole with repeatability without the reduction of an active region during self align contact processing among the fabrication process of a semiconductor device. CONSTITUTION: According to the method, a photoresist pattern(15) is formed on a part where a contact hole is to be formed during SAC(self align contact) process, and a low temperature oxide film(16) is deposited on the rest part including the photoresist pattern. And, after planarizing the low temperature oxide film and the photoresist pattern by polishing with a CMP(Chemical Mechanical Polishing) process, a fine contact hole(17) is formed by removing the photoresist pattern. The method prevents the reduction of an active region because of using a large quantity of polymer to obtain high selectivity as to a nitride film or an oxynitride film during etching the oxide in the conventional self align contact process.