SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device having an electrostatic discharge protection circuit is provided to improve a characteristic of an electrostatic discharge protection. CONSTITUTION: A semiconductor device includes an electrostatic discharge(ESD) protection circuit having a series stack structure that a general metal oxide semiconductor(GMOS) and a low threshold voltage GMOS(LVTGMOS) are connected in series. In particular, a NPN field transistor is provided for the ESD protection circuit so that a Vss terminal of the NPN field transistor is connected between a pad and the series stack structure. While the NPN field transistor provides a separate current path, a distance between the GMOS and the LVTGMOS as well as a distance between a drain region of the GMOS and a well pickup are relatively widened. Accordingly, the NPN field transistor performs the ESD protection and thereby an over current in the drain of the GMOS is prevented.