发明名称 METHOD FOR FORMING FUSE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for forming fuse of semiconductor device is provided to form fuse lines as contacts to melt them with low voltage, thereby simplify repair process. CONSTITUTION: A method for forming fuse of semiconductor device comprises steps of: forming a junction area in a fuse area of a semiconductor substrate and forming a first interlayer dielectric having a bit line contact hole; forming a bit line contact plug connected to the junction area through the contact hole; forming first/second bit lines connected to the contact plug and an outer power supply, respectively; forming a second interlayer dielectric having a storage electrode contact plug connected to the first bit lines and the junction area; forming a storage electrode connected to the storage electrode contact plug; forming a third interlayer dielectric having a metal wiring contact plug connected to the first/second bit lines; and forming a metal wiring connected to the metal wiring contact plug.
申请公布号 KR20000045369(A) 申请公布日期 2000.07.15
申请号 KR19980061927 申请日期 1998.12.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 JEON, BAE GEUN;KIM, SANG CHEOL
分类号 H01L27/06;(IPC1-7):H01L27/06 主分类号 H01L27/06
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