发明名称 |
METHOD FOR FORMING FUSE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for forming fuse of semiconductor device is provided to form fuse lines as contacts to melt them with low voltage, thereby simplify repair process. CONSTITUTION: A method for forming fuse of semiconductor device comprises steps of: forming a junction area in a fuse area of a semiconductor substrate and forming a first interlayer dielectric having a bit line contact hole; forming a bit line contact plug connected to the junction area through the contact hole; forming first/second bit lines connected to the contact plug and an outer power supply, respectively; forming a second interlayer dielectric having a storage electrode contact plug connected to the first bit lines and the junction area; forming a storage electrode connected to the storage electrode contact plug; forming a third interlayer dielectric having a metal wiring contact plug connected to the first/second bit lines; and forming a metal wiring connected to the metal wiring contact plug.
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申请公布号 |
KR20000045369(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980061927 |
申请日期 |
1998.12.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
JEON, BAE GEUN;KIM, SANG CHEOL |
分类号 |
H01L27/06;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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