| 摘要 |
PURPOSE: A fabrication method of a transistor in a semiconductor device is provided to prevent a lowering of characteristics of the transistor caused by a formation of gate sidewall spacers. CONSTITUTION: A fabrication of a transistor begins with the formation of an N-well(2), a P-well(3) and an R-well(4) in a semiconductor substrate(1). Then, an isolation layer(5) defining an active region is formed on the substrate(1). Next, a gate oxide and a conductive layer are stacked on the substrate(1) and then etched by using a photoresist pattern until a remaining oxide layer(8) is reduced to a thickness of 30 to 80 angstrom, so that gate electrodes(6) are formed. Next, after lightly doped regions(20) of N-type are formed in the respective wells(2,3,4), polymer is generated from the photoresist pattern and thereby gate sidewall spacers of polymer are formed. The photoresist pattern is then removed, and high dopant implantation using the polymer spacers as a mask is performed. Therefore, heavily doped regions(30) are formed in the respective wells(2,3,4). Finally, the polymer spacers are removed.
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