METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to restrict generation of a punch-through path by forming an LDD(Lightly Doped Drain) area at a junction portion between a source/drain area and a semiconductor substrate. CONSTITUTION: A method for manufacturing a semiconductor device comprises the following steps. A gate electrode is formed on an upper portion of a semiconductor substrate(31) formed with an n-well(32) and a p-well(33). An n-type dopant with a low density is implanted on both sides of the semiconductor substrate formed with a gate electrode(36) in order to form a first LDD area(37). A first insulating layer spacer(38) is formed at a side wall of the gate electrode. The n-type dopant with a low density implanted on both sides of the semiconductor substrate formed with the first insulating layer in order to form a second LDD area(39). The second LDD area is formed at a lower portion of the first LDD area. A second insulating layer spacer(40) is formed at a side wall of the first insulating layer spacer. A p-type dopant with a high density implanted on both sides of the semiconductor substrate formed with the second insulating layer by using an n-well mask for exposing the n-well, in order to form a p+ source/drain area(41). An n-type dopant with a high density implanted on both sides of the semiconductor substrate formed with the second insulating layer spacer by using a p-well mask for exposing the p-well, in order to form an n+ source/drain area(42).