METHOD FOR FORMING PHOTORESIST PATTERN

摘要

PURPOSE: A method for forming a photoresist pattern is provided to form a photoresist pattern on a nitride layer by using an amorphous silicon layer as a non-reflective layer. CONSTITUTION: A method for forming a photoresist pattern comprises the following steps. A photoresist layer is applied on a nitride layer. The photoresist layer is exposed. The exposed photoresist layer is developed by a predetermined chemical solution. A photoresist pattern is formed on the nitride layer. In the method for forming the photoresist pattern, an amorphous silicon layer used as a non-reflective layer is deposited on the nitride layer in order to lower a reflective rate of a light source before the photoresist layer is applied on the nitride layer.