METHOD FOR FORMING BIT LINES OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming bit lines of semiconductor device is provided to form a buffer layer on a portion which titanium silicide is generated, thereby preventing the degradation of the device. CONSTITUTION: A method for forming bit lines of semiconductor device comprises steps of: forming a lower insulating layer having a bit line contact hole formed on a substrate; forming a titanium film; forming a silicon layer on the titanium film; forming a titanium nitride layer; performing RTA(rapid thermal annealing) process to the substrate, thereby forming a titanium silicide film on the boundary of the contact hole and the substrate; and forming a tungsten film filling the contact hole.