METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to guarantee stabilization of a metal wiring process by improving a dual damascene pattern. CONSTITUTION: A method for forming a metal wire of a semiconductor device comprises the following steps. An interlayer dielectric(12) is formed on a substrate(11). A via contact hole for exposing the substrate is formed by etching a part of the interlayer dielectric. A photoresist is applied on the first interlayer dielectric including the via contact hole. A photoresist pattern is formed by patterning the photoresist. A second interlayer dielectric(15) is formed on the first interlayer dielectric including the photoresist pattern. A chemical mechanical polishing process is performed to expose an upper portion of the photoresist pattern. The exposed photoresist pattern is removed to form a trench and a via contact hole and a dual damascene pattern are formed therefrom. A metal wiring(16) is formed within the dual damascene pattern.