COMPOUND SEMICONDUCTOR AND ITS FABRICATION

摘要

In a method of epitaxially growing a III-V compound semiconductor thin film, using a hydride and an organic metal both containing no halogens as the material for the epitaxial growth, a small amount of a halide gas and/or a halogen gas both containing no elements constituting the compound to be grown is added to the material gas in the course of the vapor growth. By the addition the hetero-interface can be flattened, and a high quality crystal can be grown over a wide range without depositing polycrystals on the mask.