METHOD FOR FORMING INSULATING LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an insulating layer of a semiconductor device is provided to increase a mean-free-path of a deposited reaction material by using a high density plasma chemical vapor deposition method. CONSTITUTION: A method for forming an insulating layer of a semiconductor device comprises the following steps. A semiconductor substrate(11) formed with a wiring(13) is loaded into a reaction chamber of a high density plasma chemical vapor deposition equipment. A reaction gas containing an inactive gas is flowed. A power of a high frequency is applied to the semiconductor substrate in order to perform a deposition process. The amount of the flow of the inactive gas is about 20 to 300 sccm.