| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent cracks in an oxide layer by lessening stress of the layer. CONSTITUTION: A method for fabricating a semiconductor device comprises forming a nitride layer(4) only on a cell region(A) after forming bit lines, forming a first insulating layer(5), etching the first insulating layer(5) to expose the nitride layer(4) on the cell region, wherein a portion of the nitride layer(4) remains between the bit lines, forming a second insulating layer(6), polishing the second insulating layer(6) to make it plane, forming contact holes, forming a polysilicon layer(8), coating photoresist(9), exposing the second insulating layer(6) by removing the photoresist(9) and the polysilicon layer(8), and etching the second insulating layer(6) to a certain thickness.
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