发明名称 |
METHOD FOR FORMING TRENCH ISOLATION FILM OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for forming a trench isolation film of a semiconductor device is provided which can suppress stress induced on a substrate during a post thermal oxidation process after a shallow trench isolation process. CONSTITUTION: A method for forming a trench isolation film suppresses stress induced on a silicon substrate(101) during a thermal oxidation process. The method suppresses an oxidation gas to penetrate into the semiconductor substrate during the post thermal oxidation process, by forming a nitride layer(200) at an interface between a trench side wall oxide and the semiconductor substrate by performing a nitrogen ion implantation, after forming a trench(104) and the trench side wall oxide. Therefore, the method can prevent the defect of semiconductor lattice.
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申请公布号 |
KR20000044560(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980061059 |
申请日期 |
1998.12.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
WON, DAE HEE;PI, SEUNG HO |
分类号 |
H01L21/76;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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