METHOD FOR FORMING MULTILAYER METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A multilayer metal wiring forming method of a semiconductor device is to achieve a high integration and a miniaturization of a device by narrowing an interval between a lower metal wiring and an upper metal wiring. CONSTITUTION: An etch stop film(23) is formed on the substrate including the lower metal wiring, after forming a lower metal wiring(22) on a substrate(21). A first interlayer insulating film is then provided with a plurality of dual damascene patterns consisting of a trench and a via contact hole. The first interlayer insulating film is then formed on the etching stopper. After forming a barrier metal layer and a metal layer on the first interlayer insulating film including the dual damascene patterns, a plurality of upper metal wiring(290) connected to the lower metal wiring is formed through the via contact hole by performing a chemical machine polishing. The first interlayer insulating film is then removed, and an insulating film with an air gap(31) formed between the upper metal wiring is formed on the resultant material. Finally, a second interlayer insulating film(300) is formed to electrically separate the lower metal wiring and the upper metal wiring.