| 摘要 |
PURPOSE: A method for fabricating a metal line of a semiconductor device is provided to improve an electrical property by reducing contact resistance. CONSTITUTION: A method for fabricating a metal line of a semiconductor device comprises forming a contact hole(14) in an insulating layer(13) to exposing a portion of a junction(12), forming a first diffusion barrier layer(15) on an overall substrate(11), depositing a first metal(16) to filling in the contact hole(14), forming a second diffusion barrier layer(17) on the first metal(16), forming a second metal(18) and an anti-reflection layer(19) on the second diffusion barrier layer(17) in order, and patterning the anti-reflection layer(19), the second metal(18), the second diffusion barrier layer(17), the first metal(16) and the first diffusion barrier layer(15) in order.
|
