METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided which can improve the process yield and the reliability of device operation by omitting a process to form a storage electrode contact. CONSTITUTION: A method for fabricating a semiconductor device can omit an additional photolithography process to remove an etch stopper on a peripheral circuit region on a semiconductor substrate(12), by the processes of: forming a first inter level insulation film(20) on top of the semiconductor substrate where a storage electrode contact plug(22) and a bit line(24) are formed; forming the etch stopper revealing a part where a storage electrode contact is to be formed on a cell region of the substrate on top of the first inter level insulation film; forming a second inter level insulation film(30) on top of the etch stopper; revealing the storage electrode contact plug by etching the second and first inter level insulation films; and forming a storage electrode connected to the storage electrode contact plug. The method also simplifies the process by forming the storage electrode without a process to form another storage electrode contact connected to the storage electrode contact plug.