| 摘要 |
PROBLEM TO BE SOLVED: To form an excellent thin film transistor(TFT) in a high-safely process by a method wherein an amorphous semiconductor film is formed by using a sputtering method, which can form a film at low temperature and is excellent in productivity. SOLUTION: A base film 101 is formed on a substrate 100, a heat treatment is performed to lamination-form a semiconductor film 102 on the film 101 by a sputtering method, a crystalline semiconductor film 103 is formed on the film 102 to pattern the film 103, an active layer 104 is formed on the film 103 to form an insulating film 5 on the film 104 by the sputtering method, a conductive film is formed to form an anodic oxide film an a gate wiring, the film 105 is patterned by using them as mask to form a gate insulating layer. Then an N-channel TFT is covered with a mask and impurities are added to the layer 104, a high-concentration impurity region is formed into source and drain regions and a low-concentration impurity region is formed into an LDD region and a channel formation region. Accordingly, as an amorphous semiconductor film is formed by the sputtering method, a TFT can be formed in a high-safety working atmosphere.
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