| 摘要 |
PURPOSE:To enable a diffusion having reproducibility by thermally treating a BN substrate in a NH3 atmosphere and diffusing boron to a semiconductor substrate in an oxidizing atmosphere by using the BN substrate. CONSTITUTION:A BN substrate is thermally treated in an O2 atmosphere, and B2O3 generated as the result of heat treatment is evaporated on a semiconductor substrate, and boron is diffused and introduced to the semiconductor substrate from the B2O3. The semiconductor substrate is removed outside a system, and said BN substrate is thermally treated in a NH3 atmosphere in the system. Accordingly, the formation of B2O3 on a diffusion is stabilized, and reproducibility is completed. The substrate is preserved easily because an oxide layer on the surface of the BN substrate is regenerated to BN at all times. |
