| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which is capable of reducing a reactive current, possessed of a low threshold current, and excellent in luminous efficacy by a method wherein the prescribed pattern of a second base layer is so formed as to make a part of a first base layer come into contact with a laminated structure. SOLUTION: A GaN first base layer 2, an AlN second base layer 3, an n-type GaN contact layer 4, an n-type Al0.1Ga0.9N clad layer 5, an In0.2Ga0.8N single quantum well active layer 6, a p-type Al0.1Ga0.9N clad layer 7, and a p-type GaN contact layer 9 are successively laminated on a sapphire substrate 1 for the formation of a semiconductor laser device 100. The sapphire substrate 1 is exposed to hydrogen gas(H2) and nitrogen gas(N2) at a temperature of about 1100 deg.C to clean its surface. Then, the temperature of the sapphire substrate 1 is set at about 600 deg.C, and the GaN first base layer 2 of thickness about 550 Å, and the AlN second base layer 3 of thickness about 550 Å are successively laminated on the substrate 1. |
