| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a low working voltage. SOLUTION: A semiconductor laser element 100 comprises a low temperature buffer layer 2, an n-GaN layer 3, an n-clad layer 4, an n-optical guide layer 5, an n-MQW light emitting layer 6, a p-AlGaN layer 7, a p-optical guide layer 8, a p-clad layer 9 and a p-contact layer 10 formed sequentially on a sapphire substrate 1. Partial region from the p-contact layer 10 to the n-clad layer 4 is etched and an n-electrode 21 is formed on the exposed n-clad layer 4. A p-electrode 20 is formed on the p-contact layer 10. |
