| 摘要 |
PROBLEM TO BE SOLVED: To enable a metal wiring layer to be formed without deteriorating it in smear characteristics by a method wherein an insulating film is buried in a region that isolates a charge transfer electrode so as to be equal to or lower in height than the charge transfer electrode. SOLUTION: A first P-type well 102 is formed on an N-type semiconductor substrate 101, a photoelectric conversion part 100 is formed in the surface region of the P-type well 102, and a vertical charge transfer part 104 is formed adjacent to the photoelectric conversion part 100. A charge read-out part 105 which reads out the signal charge generated by the photoelectric conversion part 100 for the charge transfer part 104 is provided in the surface region of the first P-type well 102, and a charge transfer electrode 110 is formed on the charge read-out part 105 and the charge transfer part 104 through the intermediary of a gate insulating film 107. An insulating film 115 is buried in isolation groove regions that, divide the charge transfer electrode 110 in the direction of a column and flattened, and an interlayer insulating film 116 and a metal shading film 117 are formed.
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