| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize high density and stable operation required for high definition and high reliability operation having beam focusing action allowing high definition. SOLUTION: A field emission type electron source device is provided with a field emission electron source part including a lead electrode 7, formed on a p-type silicon substrate 1 via an insulating film 6, having an opening part at a portion corresponding to a cathode forming region and a cathode part 5 formed at a part corresponding to the opening part and N-channel field effect transistor part 2-4 formed on the substrate 1. The field emission electron source part is formed at drain regions 3, 4 of the transistor part. A field emission current from the field emission electron source part is controlled by control voltage applied to a gate electrode 8. The drain regions include two kind of wells whose impurity concentration are different from each other. A well 4 whose the impurity concentration is lower than another is formed at an end part of the drain region contacting with a channel region of the transistor part.</p> |
