| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a source offset in a semiconductor device which has a trench gate structure FET, where a trench extended at the main face of a semiconductor substrate is provided with a conductor layer to serve as the gate. SOLUTION: For a semiconductor device which has a trench structure FET, where a groove extended at the main face of a semiconductor substrate is provided with a conductor layer to serve as the gate, the top of the trench gate conductor layer 4 is made equal to or slightly higher than the main face of the semiconductor substrate. Moreover, the top of the trench gate conductor layer 4 is made substantially flat or convex, and the top of this trench gate conductor 4 is made equal to or slightly higher than the main face of the semiconductor substrate. Moreover, the top of the conductor layer of the trench gate 4 is made equal to or slightly higher than the main face of the semiconductor substrate by etching the semiconductor substrate, and then a channel region and a source region are formed through ion implantation.
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