| 摘要 |
PROBLEM TO BE SOLVED: To obtain a pattern forming method excellent in the coarse/fine dependency of a resist pattern formed by using far ultraviolet ray, particularly ArF excimer laser beam and suitable for the light source of the short wave by using a specific acid degradable resin as a composition and a specific one as a developer. SOLUTION: A photoresist composition containing a resin containing a compound generating an acid by the irradiation with radiation or the like and the resin containing an alkali soluble group protected by at least one of groups containing alicyclic hydrocarbon structure expressed by formula I-III and degraded by the action of the acid to increase the solubility in an alkali is applied on the substrate. The pattern forming method further contains exposure and development with an organic alkali aqueous solution. In the formula, R11 represents a methyl group, ethyl group or the like, Z represents an atomic group necessary for forming an alicyclic hydrocarbon group with carbon atom. Each of R12-R16 independently represents a 1-4C linear or branched alkyl group or an alicyclic hydrocarbon group. |
