发明名称 CLEANING METHOD FOR SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a clearing method wherein noble metallic particles and such metal which diffuses into silicon at high speed which are difficult to be removed so far are sufficiently removed. SOLUTION: In the presence of ozone or oxygen, the surface of a natural oxide film 2 is irradiated with ultraviolet rays, so that Fe particle 4 and Cu particle 5 are oxidized to provide iron oxide 8 and copper oxide 9. Then the natural oxide film 2 is removed in a wet process, which uses a buffered hydrofluoric acid, etc., while the metal oxide is removed at the same time.
申请公布号 JP2000195836(A) 申请公布日期 2000.07.14
申请号 JP19980374175 申请日期 1998.12.28
申请人 NEC CORP 发明人 SHIROMIZU YOSHIMI
分类号 H01L21/306;H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/306
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