| 摘要 |
PURPOSE: To obtain a semiconductor device whose leakage currents are small, which is capable of being made to be a high integration and is capable of being formed with small processings and also whose output levels are proper. CONSTITUTION: Input signals (d), WF and the inverse of (d), the inverse of WF having the inverse logic consisting of positive logic or negative logic are inputted to a logic generating part 12 constituted of PMOS transistors Q21 to Q28 and logics generated in this logic generating part 12 are respectively inputted to PMOS transistors 35, 36 via basic circuits 13, 14. Consequently, since voltages to be impressed on gates of PMOS transistors 35, 36 are controlled to prescribed values according to input signals to be switched surely, a proper high level (VH) and a proper low level (VL) are successively outputted. Moreover, an intermediate level voltage (VC) is outputted by being switched by a PMOS transistor 37 and, thus, an alternating voltage is outputted by these voltages. |
