发明名称 HEMI-SPHERICAL STRUCTURE AND METHOD FOR FABRICATING THE SAME
摘要 Hemi-spherical structure and method for fabricating the same. A device includes discrete pillar regions on a substrate, and a pattern layer on the discrete support structures and the substrate. The pattern layer has hemi-spherical film regions on the discrete support structures respectively, and planarized portions on the substrate between the hemi-spherical film regions. Each of the hemi-spherical film regions in a position corresponding to each of the support structures serves as a hemispherical structure.
申请公布号 US2008166883(A1) 申请公布日期 2008.07.10
申请号 US20080048006 申请日期 2008.03.13
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIU MING-CHYI;LO CHI-HSIN
分类号 H01L21/31 主分类号 H01L21/31
代理机构 代理人
主权项
地址