| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering treating method capable of obtaining stable discharge, capable of forming a thin film of uniform film quality, reducing exhausting time and good in workability and to provide a device suitable for the carrying out the method. SOLUTION: In a sputtering treating method in which, in a vacuum treating chamber 1, a substrate 3 and a sputtering target 9 fitted to a backing plate 6 composing a cathode 4 are oppositely provided, plasma is generated in the chamber, and the target is sputtered to form a thin film on the substrate, prior to the start of the sputtering, a heat fluid is circulated in the backing plate, and the temp. of the target is controlled to the one higher than a room temp. and also giving no damage to the target.
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