发明名称 Compensation technique using MOS capacitance
摘要 Two FET transistors provide an electrical circuit characterized by a stable capacitance across a wide range of input voltages and temperture fluctuations. Additionally, the transistors provide a capacitive compensation circuit which stabilizes the output voltage of a band-gap reference circuit. The compensation circuit encompasses the electrical connecting of a PFET capacitor across the terminals of an NFET capacitor (preferably a low threshold voltage NFET), wherein the gate of the of the NFET capacitor is directly connected to an input lead, the substrate is grounded, and the source and drain are directly connected to a common output lead. The PFET is also directly connected to the the input lead and the output lead, however, instead of the substrate being grounded, the substrate of the PFET is electrically connected to the common output lead. This configuration results in a circuit which provides a steady capacitance across a wide range of voltages, and most importantly, during power-up of the reference circuit.
申请公布号 US6087896(A) 申请公布日期 2000.07.11
申请号 US19980163789 申请日期 1998.09.30
申请人 CONEXANT SYSTEMS, INC. 发明人 BAZZANI, CRISTIANO
分类号 G05F3/24;G11C5/14;G11C7/14;(IPC1-7):H01G7/06 主分类号 G05F3/24
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