发明名称 |
Method of sputtering a carbon protective film on a magnetic disk with high sp3 content |
摘要 |
Sputtering method for producing amorphous hydrogenated carbon thin films with high sp3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp3 bonding fraction can be obtained. Previously, carbon films with a very high sp3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness. Also compared to PE-CVD and ion-beam deposition, the new sputtering process produce much less particles and the process can be run on a manufacturing tool for much longer time, thereby increasing the productivity of the machine, and providing disks with higher quality.
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申请公布号 |
US6086730(A) |
申请公布日期 |
2000.07.11 |
申请号 |
US19990298107 |
申请日期 |
1999.04.22 |
申请人 |
KOMAG, INCORPORATED |
发明人 |
LIU, WEN HONG;PENG, GANG;YAMASHITA, TSUTOMU;CHEN, TU |
分类号 |
C23C14/06;C23C14/34;G11B5/84;G11B5/851;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/06 |
代理机构 |
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