| 摘要 |
PROBLEM TO BE SOLVED: To make the thickness of a film on the substrate surface uniform and symmetrical by sputtering a target in a state in which the introduction of gas into a vacuum chamber is cut off, and, the exhaust of a vacuum chamber is cut off. SOLUTION: In a state in which a main valve 4 and a movable valve 3 are opened, a vacuum chamber 1 is exhausted to a degree of 10-7 Torr. A gas introducing valve 8 is opened, and, by using a gas flow rate controller 6, into the vacuum chamber 1, discharge gas 7 is introduced by a prescribed flow rate. As the discharge gas 7, gaseous argon is used. Next, the pressure in the vacuum chamber 1 is controlled to the prescribed one by the movable valve 3. The main valve 4 and the gas introducing valve 8 are simultaneously closed by a control device 15, and, simultaneously, electric power is applied to a sputtering electrode 10 by a power source 11 to form plasma on a target 9 and to form a thin film on a substrate 14. The nonuniformity of the pressure caused by the flow of gas in the vacuum chamber 1 in the process of the formation of the thin film is solved to make the film thickness of the thin film to be formed uniform and symmetrical.
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