| 摘要 |
PURPOSE: A thin film transistor and a method for fabricating the thin film transistor are provided to improve the quality of the thin film transistor by preventing a copper of a gate electrode from diffusing ITO an active layer. CONSTITUTION: A gate electrode(33) is formed on a semiconductor substrate(11). An anti-diffusing layer(35) is formed on the surface of the gate electrode(33). A gate insulation film(37), an active layer(39) and an ohmic contact layer(41) are sequentially formed on the anti-diffusing layer(35). Then, the active layer(39) and the ohmic layer(41) are patterned such that the gate insulation film(37) is exposed thereby removing remaining portion except for a portion corresponding to the gate electrode(33). Source/drain electrodes which are connected to the ohmic contact layer(41) is formed on the substrate(11).
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