METHOD OF MANUFACTURING SILICON-ON-INSULATOR WAFER

摘要

PURPOSE: A method of manufacturing a SOI(silicon-on-insulator) wafer is to make uniform the thickness of a silicon layer on which a device is to be formed, and to prevent the deterioration of an electrical property thereof. CONSTITUTION: A method of manufacturing a SOI wafer comprises the steps of: providing a first silicon substrate(10) and a second silicon substrate composed of a bulk silicon, respectively; forming a thermal oxide film(11) on a surface at one side of the first silicon substrate; ion-implanting a boron ion or a phosphorus ion into a prescribed depth from the surface at one side of the second silicon substrate to form an impurity layer; joining the surface at one side of the second silicon substrate onto the thermal oxide film; polishing the surface at the other side of the second silicon substrate by a prescribed depth; etching the surface at the other side of the second silicon substrate to a portion adjoining the impurity layer; etching a portion of the second silicon substrate remaining on the impurity layer; and polishing the surface at the other side of the second silicon substrate comprising the impurity layer by a prescribed depth.