| 摘要 |
PURPOSE: A forming method for contact of semiconductor device and manufacturing method for capacitor of semiconductor using the forming method for contact are provided to realize fine line width on the semiconductor. CONSTITUTION: A contact mask material layer, an anti-reflection layer, and a photoresist layer are piled up orderly on a semiconductor substrate. By patterning process on the photoresist layer, a photoresist pattern is formed on the upper side of anti-reflection layer. Using the photoresist pattern as a mask, a film of layer insulation is exposed by etching the anti-reflection layer and the contact mask material layer. A contact hole is made by etching the exposed film of layer insulation. After making the contact hole, the photoresist pattern and the anti-reflection pattern are removed. Exposing the upper side of contact mask pattern and the bottom of contact hole, a spacer composed of isolator is formed. A conductive film covers the exposed bottom of contact hole, the spacer, and the upper side of contact mask pattern. A storage mode of capacitor consisted of the isolator film and contact mask pattern is made by etching the isolator film and contact mask pattern. After the step, a capacitor can be made by normal procedure.
|
