发明名称 GATE ACTUATION CIRCUIT INTEGRATED LIQUID CRYSTAL DISPLAY USING NON-CRYSTAL SILICON THIN FILM TRANSISTOR OPERATION
摘要 PURPOSE: A gate actuation circuit integrated liquid crystal display using a non-crystal silicon thin film transistor operation is provided to integrate low frequency gate integrated circuits using the unmodified non-crystal silicon thin film transistor operation. CONSTITUTION: A gate actuation circuit integrated liquid crystal display using a non-crystal silicon thin film transistor operation includes seven NMOS transistors(MN11-MN17). Input is applied to the gate and drain of the first NMOS transistor(MN11). The source of the first NMOS transistor is coupled to the gate of the second NMOS transistor(MN12). A first power source is applied to gate and drain of the third NMOS transistor. The junction of the second and third NMOS transistor is applied to gate and drain of the forth NMOS transistor. The source of the forth NMOS transistor is coupled to the source of the fifth NMOS transistor. The drain of the sixth NMOS transistor and the drain of the fifth NMOS transistor is coupled to the source of the seventh NMOS transistor.
申请公布号 KR20000038147(A) 申请公布日期 2000.07.05
申请号 KR19980053037 申请日期 1998.12.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HEO, JAE HO
分类号 G02F1/133;(IPC1-7):G02F1/133 主分类号 G02F1/133
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