SPUTTERING EVAPORATION SOURCE OF UNBALANCE MAGNETRON

摘要

PURPOSE: A sputtering evaporation source of unbalance magnetron is provided to improve an evaporation rate and an ionization rate and to increase up to 30cm for the distance between a board and a target by installing a reinforcing plate made up of metal around an electromagnet in an unbalance magnetron method. CONSTITUTION: A magnetron sputtering evaporation source is used to evaporate with ions generated by feeding a high voltage to a target in a non-active gas atmosphere. Herein, an unbalance magnetron method is used to improve a film characteristic by feeding an additional magnetic field to the outside of the evaporation source and increasing the ionization rate of a board. The evaporation rate is improved by covering around the electromagnet with a reinforcing plate made up of metal while the ionization rate is improved even at a low electromagnet current. Further, the reinforcing plate is consisted of pure iron, and the current is 2 to 5 Angstroms.