METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to increase the capacitance of the capacitor by maximizing the surface area of a lower electrode of the capacitor. CONSTITUTION: A first insulation film(32) having a plurality of contact holes(34) is formed on a semiconductor substrate(31). A second insulation film(36) and a mask layer are formed on the semiconductor substrate(31). A plurality of plugs(35) are formed in the contact holes(34). A plurality of first mask patterns(37) are formed between the plugs(35). By selectively removing the first mask patterns(37), a second mask patterns(38) are formed. Then, the second insulation film(36) is etched so as to expose the plug(35). A conductive layer and a third insulation film(41) are sequentially on the semiconductor substrate(31). A capacitor lower electrode(40a) is formed by removing materials positioned on the upper portion of the second insulation film(36). A dielectric film(42) and an upper electrode(43) are formed on the lower electrode(40a).