| 摘要 |
PURPOSE: A method for forming a local interconnection layer of a semiconductor device is provided which can assure a process margin and can simplify the process, by forming a titanium-silicide on a side wall of a nitride film and using it as a local interconnection layer. CONSTITUTION: To assure a process margin and to simplify the process, a method for forming a local interconnection layer processes of: forming a gate(23,24) having a nitride film side wall(25) on an active region and an isolation region(22) of a semiconductor substrate(21); forming a source/drain(26A,26B) in the active region of the semiconductor device, by implanting P-type impurity ion with the gate having the nitride side wall as a mask; forming a mask layer on the nitride side wall of the gate formed on the isolation region; implanting N-type impurity ion by applying the mask layer; forming a silicide on the source/drain, the gate and the nitride film side wall where the N-type impurity ion is not implanted by applying the silicide process, after removing the mask layer; depositing an inter level insulation film(28) and forming a contact hole(29) by etching a part of the inter level insulation film; and forming a contact(30) by filling a conductive material in the contact hole.
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