Memory row driver with parasitic diode pull-down function

摘要

An integrated circuit memory array has a plurality of rows of memory cells, each row of memory cells being coupled to a respective row line for enabling the memory cells of the row. A row driver of the memory array provides a row voltage on the row line. A pull-up transistor of the row driver pulls up the row voltage in response to a row control signal. A parasitic diode of the pull-up transistor is coupled at its anode to the row line and is adapted to pull the row voltage down from a high state voltage to a diode drop voltage plus a low state voltage in response an enable block signal coupled to the cathode of the parasitic diode. A pull-down transistor of the row driver also pulls down the row voltage in response to the row control signal.