发明名称 Semiconductor storage device having a divided word line structure
摘要 There is described a divided word line semiconductor storage device including a plurality of sub-word lines each having an open end and a main word line provided so as to be shared among the plurality of sub-word lines. The semiconductor storage device further includes a decoder which selectively supplies a high or low potential to a predetermined portion of each sub-word line according to whether or not the sub-word line corresponds to a designated address, and switching devices capable of connecting the open ends of the plurality of sub-word lines to a ground potential.
申请公布号 US6084821(A) 申请公布日期 2000.07.04
申请号 US19990225468 申请日期 1999.01.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HOSHITA, TETSUSHI
分类号 G11C11/41;G11C8/10;G11C11/401;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/41
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