发明名称 |
Semiconductor storage device having a divided word line structure |
摘要 |
There is described a divided word line semiconductor storage device including a plurality of sub-word lines each having an open end and a main word line provided so as to be shared among the plurality of sub-word lines. The semiconductor storage device further includes a decoder which selectively supplies a high or low potential to a predetermined portion of each sub-word line according to whether or not the sub-word line corresponds to a designated address, and switching devices capable of connecting the open ends of the plurality of sub-word lines to a ground potential.
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申请公布号 |
US6084821(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19990225468 |
申请日期 |
1999.01.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HOSHITA, TETSUSHI |
分类号 |
G11C11/41;G11C8/10;G11C11/401;G11C11/407;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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