发明名称 MECHANISM AND METHOD FOR SUPPORTING SUBSTRATE FOR FILM FORMATION
摘要 <p>PROBLEM TO BE SOLVED: To provide a support mechanism and support method for a substrate for film formation, which can carry the filmed substrate out, without damaging the filmed substrate and the film formed thereupon. SOLUTION: A support mechanism 20 is equipped with a stage 21, a shaft member 22, and support pins 23 and 24. When a substrate M is mounted on the stage 21 which is held horizontally, the shaft member 22 rotates and the stage 21 is lifted up to a filming position, where the mount surface 21a becomes nearly perpendicular. After a film is formed at the filming position, the support pins 23 and 24 provided to the stage 21 are moved to prevent the thin film formed on the substrate M from peeling and the substrate M from cracking or chipping.</p>
申请公布号 JP2000188315(A) 申请公布日期 2000.07.04
申请号 JP19980365310 申请日期 1998.12.22
申请人 SHARP CORP 发明人 KAWAGUCHI MASAO
分类号 H01L21/683;C23C16/44;H01L21/205;H01L21/68;H01L21/687;(IPC1-7):H01L21/68 主分类号 H01L21/683
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