发明名称 |
Sputter device |
摘要 |
A sputtering device includes a sputter chamber equipped with a vacuum pump system; a metal target provided inside the sputter chamber; a sputtering power source for producing a sputter discharge and sputtering the target to create sputter particles; a substrate holder for holding a substrate in the position where the sputter particles land; and a gas introduction device for introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target, and produces a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone, wherein the compound can be dissociated in another region of the substrate. A method of sputtering includes the steps of producing a sputter discharge with a sputtering power source for sputtering a metal target in a sputter chamber to create sputter particles; holding a substrate in a position where the sputter particles land; introducing into the sputter chamber a reactive gas that reacts with the sputter particles released from the target to produce a compound that has a lower sticking characteristic to a special region of the substrate than do the sputter particles alone; and dissociating the compound in another region of the substrate.
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申请公布号 |
US6083361(A) |
申请公布日期 |
2000.07.04 |
申请号 |
US19980013288 |
申请日期 |
1998.01.26 |
申请人 |
ANELVA CORPORATION |
发明人 |
KOBAYASHI, MASAHIKO;NUMASAWA, YOICHIRO |
分类号 |
C23C14/34;C23C14/00;C23C14/04;C23C14/35;C23C14/56;H01J37/34;H01L21/768;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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