| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that an area of this sub-word driver is reduced in designing of the layout of the sub-word driver, and there is no possibility of that non-selection sub-word lines from which a main word line is selected is lifted up at the time of reset. SOLUTION: This device is 256Mb SDRAM(synchronous dynamic RAM) constituted of four banks, one PMOS transistor MP* and one NMOS transistor MN* connected respectively to main word lines MW* (*: arbitrary numeral) B are provided in a sub-word driver SWD of direct peripheral circuits corresponding to each memory array bank, further, a NMOS transistor MN* connected to a selection line FX*B is provided, the device is constituted so that the NMOS transistor MN* is shared by two sub-word drivers SWD, and the selection line FX*B is rest after reset of the sub-word line SWL* in timing. |
