发明名称 Gravitationally-assisted control of spread of viscous material applied to semiconductor assembly components
摘要 A method of forming high definition elements for electrical and electronic devices, substrates, and other components from or including viscous material. The method includes inverting the electrical components after the viscous material is applied and maintaining the inverted orientation until the viscous material dries or cures enough to maintain definition of its perimeter and edge characteristics.
申请公布号 US6083768(A) 申请公布日期 2000.07.04
申请号 US19960709182 申请日期 1996.09.06
申请人 MICRON TECHNOLOGY, INC. 发明人 JIANG, TONGBI;AHMAD, SYED S.
分类号 H01L21/56;H01L21/60;H01L23/24;H01L23/495;H05K1/09;H05K3/12;H05K3/30;H05K3/32;(IPC1-7):H01L21/00;H01L21/44;H01L21/48;H01L21/50 主分类号 H01L21/56
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